| PART |
Description |
Maker |
| SGM2014 SGM2014AM |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2014AN |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| SGM2016AN |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| SGM2016 SGM2016M SGM2016P SGM2016M_P |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
SONY[Sony Corporation]
|
| 3SK274 E001715 |
From old datasheet system
N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
| NE71300-N NE71300-M NE71300-L NE713 NE71383B |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE960R575 NE960R500 NE960R5 NE961R500 NE962R575 |
0.5 W X, Ku-BAND POWER GaAs MES FET
0.5 W X Ku-BAND POWER GaAs MES FET
|
NEC[NEC]
|
